Datasheet > E8V0MUWS1C

E8V0MUWS1C

更新时间： 2024-11-06 14:55:39

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	267K
描述
静电保护二极管

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中文翻译

获取价格

数据手册

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E8V0MUWS1C 数据手册

E8V0MUWS1C

ESD Protection Diode

PINNING

DESCRIPTION

Cathode

Features

Anode

• Low clamping voltage

• Low leakage current

Top View

Marking Code : 8G

Simplified outline SOD-323 and symbol

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

Symbol

P_PK

Value

350

Unit

I_PP

16.5

Air

Contact

± 30

IEC61000-4-2 (ESD)

V_ESD

Operating Temperature Range

Storage Temperature Range

T_j

- 55 to + 125

- 55 to + 150

℃

T_stg

Characteristics at T_a= 25℃ unless otherwise specified

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

8.5

0.2

Reverse Current

at V_RWM= 8 V

I_R

V_C

C_j

µA

Clamping Voltage

at I_PP= 16.5 A, tp = 8/20 µs

Junction Capacitance

at V_R= 0 V, f = 1 MHz

150

1 / 3

Dated : 16/11/2020 Rev: 01

12 3

中文翻译

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