E7V0MBPC1A
ESD Protection Diode
PINNING
Features
• Low clamping voltage
DESCRIPTION
Anode
PIN
1
Anode
2
1
2
Applications
• Digital cameras
• Portable devices
• Cellular phones
• Power supplies
Transparent top view
Simplified outline DFN1006-2H and symbol
Absolute Maximum Ratings (Ta = 25℃)
Parameter
Symbol
PPK
Value
220
12
Unit
W
Peak Power Dissipation (tp = 8/20 μs)
Peak Pulse Current (tp = 8/20 μs)
ESD per IEC 61000-4-2
IPP
A
Air
Contact
VESD
KV
± 30
Junction Temperature Range
Storage Temperature Range
Tj
- 55 to + 125
- 55 to + 150
℃
℃
Tstg
Characteristics at Ta = 25℃
Parameter
Symbol
VRWM
Min.
-
Typ.
-
Max.
7
Unit
Reverse Stand-Off Voltage
V
V
Reverse Breakdown Voltage
at IR = 1 mA
V(BR)R
7.5
-
-
-
10.5
100
Reverse Current
at VR =7 V
IR
nA
V
Clamping Voltage
at IPP = 3 A, tp = 8/20 µs
at IPP = 12 A, tp = 8/20 µs
VC
-
-
-
-
16
18
ESD Clamping Voltage
at ITLP = 4 A, tp = 0.2/100 ns
at ITLP =16 A, tp = 0.2/100 ns
VCL
-
-
10.3
11.5
-
-
V
Junction Capacitance
at VR = 0 V, f = 1 MHz
Dynamic Resistance 1)
Cj
-
-
45
-
-
pF
Rdyn
0.1
Ω
1) Dynamic Resistance calculated from ITLP = 4A to ITLP = 16 A .
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®
Dated: 01/06/2023 Rev :02