Datasheet > E5V0VUWS1CA-CH

E5V0VUWS1CA-CH

更新时间： 2023-12-06 19:52:41

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	194K
描述
静电保护二极管

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E5V0VUWS1CA-CH 数据手册

E5V0VUWS1C-CH

ESD Protection Diode

PINNING

Features

DESCRIPTION

Cathode

• AEC-Q101 Qualified

• Low capacitance

Anode

• Low clamping voltage

• Low leakage current

• Halogen and Antimony Free(HAF), RoHS compliant

Applications

Top View

Simplified outline SOD-323 and symbol

• Computers and peripherals

• Audio and video equipment

• Cellular handsets and accessories

• Communication systems

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

3.5

I_PP

Air

Contact

± 15

± 8

ESD (IEC61000-4-2)

V_ESD

Junction Temperature

T_j

125

℃

Storage Temperature Range

T_stg

- 55 to + 150

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 5 mA

V_(BR)R

6.4

7.2

1.2

0.5

Forward Voltage

at I_F= 200 mA

V_F

I_R

Reverse Current

at V_RWM= 5 V

µA

Clamping Voltage

at I_PP= 1 A, tp = 8/20 µs

at I_PP= 3.5 A, tp = 8/20 µs

V_C

ESD Clamping Voltage

at I_TLP= 4 A , tp = 0.2/100 ns

at I_TLP= 16 A , tp = 0.2/100 ns

V_CL

13.3

Junction Capacitance

at V_R= 0 V, f = 1 MHz

Dynamic Resistance ¹⁾

C_j

0.5

R_DYN

0.28

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16 A .

1 / 3

Dated: 07/07/2023 Rev : 01

12 3

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