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E5V0VUWS1C PDF预览

E5V0VUWS1C

更新时间: 2024-11-10 14:54:35
品牌 Logo 应用领域
先科 - SWST 二极管
页数 文件大小 规格书
3页 194K
描述
静电保护二极管

E5V0VUWS1C 数据手册

 浏览型号E5V0VUWS1C的Datasheet PDF文件第2页浏览型号E5V0VUWS1C的Datasheet PDF文件第3页 
E5V0VUWS1C  
ESD Protection Diode  
PINNING  
Features  
DESCRIPTION  
Cathode  
PIN  
1
• Low capacitance  
• Low clamping voltage  
• Low leakage current  
Anode  
2
2
1
Applications  
Top View  
Simplified outline SOD-323 and symbol  
• Computers and peripherals  
• Audio and video equipment  
• Cellular handsets and accessories  
• Communication systems  
Absolute Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
PPK  
Value  
42  
Unit  
W
Peak Pulse Power (tp = 8/20 µs)  
Peak Pulse Current (tp = 8/20 µs)  
3.5  
A
IPP  
Air  
Contact  
± 15  
± 8  
ESD (IEC61000-4-2)  
VESD  
KV  
Junction Temperature  
Tj  
125  
Storage Temperature Range  
Tstg  
- 55 to + 150  
Characteristics at Ta = 25℃  
Parameter  
Symbol  
VRWM  
Min.  
-
Typ.  
-
Max.  
5
Unit  
Reverse Stand-Off Voltage  
V
V
Reverse Breakdown Voltage  
at IR = 5 mA  
V(BR)R  
6.4  
-
-
-
7.2  
1.2  
0.5  
Forward Voltage  
at IF = 200 mA  
VF  
IR  
-
-
V
Reverse Current  
at VRWM = 5 V  
µA  
Clamping Voltage  
at IPP = 1 A, tp = 8/20 µs  
at IPP = 3.5 A, tp = 8/20 µs  
VC  
-
-
-
-
9
12  
V
V
ESD Clamping Voltage  
at ITLP = 4 A , tp = 0.2/100 ns  
at ITLP = 16 A , tp = 0.2/100 ns  
VCL  
-
-
10  
13.3  
-
-
Junction Capacitance  
at VR = 0 V, f = 1 MHz  
Dynamic Resistance 1)  
Cj  
-
-
0.5  
-
-
pF  
RDYN  
0.28  
1) Dynamic Resistance calculated from ITLP = 4A to ITLP = 16 A .  
1 / 3  
®
Dated: 07/07/2023 Rev : 01  

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