Datasheet > E5V0VUPC1C

E5V0VUPC1C

更新时间： 2023-12-06 20:11:22

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	189K
描述
静电保护二极管

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数据手册

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E5V0VUPC1C 数据手册

E5V0VUPC1C

ESD Protection Diode

PINNING

Features

• Low leakage

DESCRIPTION

Cathode

Anode

Applications

• Cellular phones audio

• Digital cameras

Transparent top view

Simplified outline DFN1006-2H and symbol

• Portable applications

• Mobile telephone

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

Symbol

Value

Unit

P_PK

I_PP

Air

Contact

± 25

± 23

IEC61000-4-2 (ESD)

V_ESD

Junction Temperature

T_j

125

℃

Storage Temperature Range

T_stg

- 55 to + 150

Characteristics at T_a= 25℃ unless otherwise specified

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

8.5

0.2

Reverse Current

at V_RWM= 5 V

I_R

µA

Clamping Voltage

at I_PP= 1 A, tp = 8/20 µs

at I_PP= 4 A, tp = 8/20 µs

V_C

ESD Clamping Voltage

at I_TLP= 4 A, tp = 0.2/100 ns

at I_TLP=16 A, tp = 0.2/100 ns

V_CL

11.2

19.6

Junction Capacitance

at V_R= 0 V, f = 1 MHz

Dynamic Resistance ¹⁾

C_j

0.8

R_dyn

0.7

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16 A .

1 / 3

Dated: 24/04/2023 Rev: 02

12 3

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