Datasheet > E5V0VUKB2C

E5V0VUKB2C

更新时间： 2024-11-06 14:54:27

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	204K
描述
静电保护二极管

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中文翻译

获取价格

数据手册

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E5V0VUKB2C 数据手册

E5V0VUKB2C

ESD Protection Diode

Features

• Ultra low capacitance

• Low leakage current

• Low clamping voltage

1. Cathode 2. Cathode 3. Anode

Marking Code : 5E

Applications

• Mobile display digital interface

• Infiniband transceiver protection

• HDMI interface protection

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

Symbol

P_PK

Value

125

Unit

I_PP

Air

Contact

ESD Discharge (IEC61000-4-2)

V_ESD

Junction Temperature

T_j

- 55 to + 125

- 55 to + 150

℃

Storage Temperature Range

T_stg

Characteristics (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

V_RWM

Min.

Max.

Unit

Reverse Working Voltage

Pin 1 or Pin 2 to Pin 3 and Between Pins 1 and 2

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

6.5

Pin 1 or Pin 2 to Pin 3 and Between Pins 1 and 2

Reverse Current

at V_R= 5 V

I_R

V_C

C_j

Pin 1 or Pin 2 to Pin 3 and Between Pins 1 and 2

Clamping Voltage

at I_PP= 1 A, tp = 8/20 µs, Pin 1 to Pin 2

at I_PP= 5 A, tp = 8/20 µs, Pin 1 or Pin 2 to Pin 3

Junction Capacitance

at V_R= 0 V, f = 1 MHz,Pin 1 to Pin 2

at V_R= 0 V, f = 1 MHz, Pin 1 or Pin 2 to Pin 3

0.6

0.8

1 / 3

Dated : 04/03/2021 Rev : 01

12 3

中文翻译

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