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E5V0VUDE2H PDF预览

E5V0VUDE2H

更新时间: 2024-11-06 14:53:39
品牌 Logo 应用领域
先科 - SWST 二极管
页数 文件大小 规格书
3页 195K
描述
静电保护二极管

E5V0VUDE2H 数据手册

 浏览型号E5V0VUDE2H的Datasheet PDF文件第2页浏览型号E5V0VUDE2H的Datasheet PDF文件第3页 
E5V0VUDE2H  
ESD Protection Diode  
4
5
6
Features  
Protects up to two I/O lines & power line  
Low leakage current and clamping voltage  
• Low capacitance  
1
3
2
1. I/O1 2. GND 3. I/O2  
4. I/O3 5. VCC 6. I/O4  
SOT-563 Plastic package  
Absolute Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
PPK  
Value  
Unit  
W
Peak Pulse Power (tp = 8/20 µs)  
Peak Pulse Current (tp = 8/20 µs)  
80  
5
IPP  
A
± 30  
± 30  
Air  
Contact  
IEC61000-4-2 (ESD)  
VESD  
KV  
Operating Junction Temperature Range  
Storage Temperature Range  
Tj  
-55 to + 125  
- 55 to + 150  
Tstg  
Characteristics at Ta = 25℃  
Parameter  
Symbol  
VRWM  
Min.  
-
Max.  
5
Unit  
Reverse Stand-Off Voltage  
Between I/O lines to Gnd or I/O to I/O  
V
V
Reverse Breakdown Voltage  
at IR = 1 mA, Between I/O lines to Gnd  
V(BR)R  
IR  
6
-
9
Reverse Current  
0.1  
µA  
at VRWM = 5 V, Between I/O lines to Gnd or I/O to I/O  
Clamping Voltage  
-
-
VC  
Cj  
V
11  
16  
at IPP = 1 A, tp = 8/20 µs, Between I/O to Gnd  
at IPP = 5 A, tp = 8/20 µs, Between I/O to Gnd  
Junction Capacitance  
at VR = 0 V, f = 1 MHz, Between I/O to Gnd  
at VR = 0 V, f = 1 MHz, Between I/O to I/O  
0.9  
0.5  
pF  
-
-
1 / 3  
®
Dated: 19/08/2022 Rev:02  

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