Datasheet > E5V0VUD4M

E5V0VUD4M

更新时间： 2023-12-06 20:08:16

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	203K
描述
静电保护二极管

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数据手册

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E5V0VUD4M 数据手册

E5V0VUD4M

ESD Protection Diode

1. I/O1 2. GND 3. I/O2

4. I/O3 5. VCC 6. I/O4

SOT-26 Plastic Package

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

150

I_PP

ESD per IEC 61000-4-2 (Air)

ESD per IEC 61000-4-2 (Contact)

± 15

± 8

V_ESD

Operation Junction Temperature Range

Storage Temperature Range

T_j

- 55 to + 125

- 55 to + 150

℃

T_stg

Characteristics at T_a= 25℃

Parameter

Symbol

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

at Any Pin to GND

V_RWM

V_(BR)R

I_R

Reverse Breakdown Voltage

at I_t= 1 mA, Any Pin to GND

Reverse Current

μA

at V_RWM= 5 V, Any Pin to GND

Clamping Voltage

at I_PP= 1 A, tp = 8/20 µs, Any I/O to GND

at I_PP= 6 A, tp = 8/20 µs, Any I/O to GND

V_C

ESD Clamping Voltage

at I_TLP= 4 A, tp = 0.2/100 ns, Any I/O to GND

at I_TLP=16 A, tp = 0.2/100 ns, Any I/O to GND

V_CL

10.5

18.1

Junction Capacitance

at V_R= 0 V, f = 1 MHz, Any I/O to GND

at V_R= 0 V, f = 1 MHz, Between I/O Pins

1.5

C_j

Dynamic Resistance ¹⁾

R_dyn

0.63

Ω

Dynamic Resistance calculated from I_TLP= 4 A to I_TLP= 16 A.

1 / 3

Dated: 03/03/2023 Rev: 01

12 3

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