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E5V0UVPC1C-AH PDF预览

E5V0UVPC1C-AH

更新时间: 2024-11-06 14:53:35
品牌 Logo 应用领域
先科 - SWST 二极管
页数 文件大小 规格书
3页 200K
描述
静电保护二极管

E5V0UVPC1C-AH 数据手册

 浏览型号E5V0UVPC1C-AH的Datasheet PDF文件第2页浏览型号E5V0UVPC1C-AH的Datasheet PDF文件第3页 
E5V0UVPC1C-AH  
ESD Protection Diode  
PINNING  
DESCRIPTION  
Cathode  
PIN  
1
Features  
Anode  
2
• AEC-Q101 Qualified  
• Low leakage current  
• Low capacitance  
1
2
• Halogen and Antimony Free(HAF),  
RoHS compliant  
Transparent top view  
Simplified outline DFN1006-2H and symbol  
Absolute Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
PPK  
Value  
80  
Unit  
W
Peak Pulse Power (tp = 8/20 μs)  
Peak Pulse Current (tp = 8/20 μs)  
IEC61000-4-2(ESD)  
IPP  
5
A
± 15  
± 8  
Air  
Contact  
VESD  
KV  
Operating Junction Temperature Range  
Storage Temperature Range  
Tj  
- 55 to + 125  
- 55 to + 150  
Tstg  
Characteristics at Ta = 25  
Parameter  
Symbol  
VRWM  
Min.  
-
Typ.  
-
Max.  
5
Unit  
Reverse Stand-Off Voltage  
V
V
Reverse Breakdown Voltage  
at IR = 1 mA  
V(BR)R  
6
-
-
-
-
-
Reverse Current  
at VR = 5 V  
IR  
200  
1.2  
nA  
V
Forward Voltage  
at IF = 15 mA  
VF  
-
Clamping Voltage  
at IPP = 1 A, tp = 8/20 µs  
at IPP = 4 A, tp = 8/20 µs  
VC  
-
-
-
-
9
16  
V
V
ESD Clamping Voltage  
at ITLP = 4 A, tp = 0.2/100 ns  
at ITLP =16 A, tp = 0.2/100 ns  
VCL  
-
-
10.9  
18.4  
-
-
Junction Capacitance  
at VR = 0 V, f = 1 MHz  
Dynamic Resistance 1)  
Cj  
-
-
-
0.6  
-
pF  
Rdyn  
0.63  
1) Dynamic Resistance calculated from ITLP = 4A to ITLP = 16 A.  
1 / 3  
®
Dated: 05/12/2022 Rev :01  

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