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E5V0UUPG2C-AH PDF预览

E5V0UUPG2C-AH

更新时间: 2024-11-25 14:55:55
品牌 Logo 应用领域
先科 - SWST 二极管
页数 文件大小 规格书
3页 216K
描述
静电保护二极管

E5V0UUPG2C-AH 数据手册

 浏览型号E5V0UUPG2C-AH的Datasheet PDF文件第2页浏览型号E5V0UUPG2C-AH的Datasheet PDF文件第3页 
E5V0UUPG2C-AH  
ESD Protection Diode  
Features  
2
1
2
• AEC-Q101 Qualified  
• Ultra-low capacitance  
• Ultra-low leakage current  
• Low clamping voltage  
• Halogen and Antimony Free(HAF),  
RoHS compliant  
1
Bottom view  
DFN1006-3H Plastic Package  
3
Bottom View  
1. Cathode 2. Cathode 3. Anode  
Applications  
• Portable Electronics and Notebooks  
• SATA and eSATA  
• PCI Express  
Absolute Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
PPK  
Value  
60  
Unit  
W
Peak Pulse Power (tp = 8/20 µs)  
Peak Pulse Current (tp = 8/20 µs)  
IPP  
4
A
Air  
Contact  
± 20  
± 20  
IEC61000-4-2 (ESD)  
VESD  
KV  
Operation Junction Temperature  
Storage Temperature Range  
Tj  
125  
Tstg  
- 55 to + 150  
Characteristics at Ta = 25  
Parameter  
Symbol  
VRWM  
Min.  
-
Typ.  
-
Max.  
5
Unit  
Reverse Stand-Off Voltage  
V
V
Reverse Breakdown Voltage  
at IR = 1 mA  
V(BR)R  
6
-
-
-
-
9
Reverse Current  
at VR = 5 V  
IR  
100  
1.2  
nA  
V
Forward Voltage  
at IF = 10 mA  
VF  
0.6  
Clamping Voltage  
at IPP = 1 A , tp = 8/20 µs  
at IPP = 4 A , tp = 8/20 µs  
ESD Clamping Voltage 1)  
at ITLP = 16 A , tp = 100 ns  
VC  
-
-
-
-
11  
15  
V
V
VCL  
-
19  
-
Junction Capacitance  
at VR = 0 V, f = 1 MHz, Pin1 or 2 to Pin3  
at VR = 0 V, f = 1 MHz, Between Pin1 and Pin2  
Cj  
-
-
0.4  
0.25  
0.65  
0.4  
pF  
Dynamic Resistance 1)  
RDYN  
-
0.65  
-
1) TLP parameter: Z0 = 50 , tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to 16A .  
®
1 / 3  
Dated: 27/02/2023 Rev: 02  

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