E5V0UUPG2C-AH
ESD Protection Diode
Features
2
1
2
• AEC-Q101 Qualified
• Ultra-low capacitance
• Ultra-low leakage current
• Low clamping voltage
• Halogen and Antimony Free(HAF),
RoHS compliant
1
Bottom view
DFN1006-3H Plastic Package
3
Bottom View
1. Cathode 2. Cathode 3. Anode
Applications
• Portable Electronics and Notebooks
• SATA and eSATA
• PCI Express
Absolute Maximum Ratings (Ta = 25℃)
Parameter
Symbol
PPK
Value
60
Unit
W
Peak Pulse Power (tp = 8/20 µs)
Peak Pulse Current (tp = 8/20 µs)
IPP
4
A
Air
Contact
± 20
± 20
IEC61000-4-2 (ESD)
VESD
KV
Operation Junction Temperature
Storage Temperature Range
Tj
125
℃
℃
Tstg
- 55 to + 150
Characteristics at Ta = 25℃
Parameter
Symbol
VRWM
Min.
-
Typ.
-
Max.
5
Unit
Reverse Stand-Off Voltage
V
V
Reverse Breakdown Voltage
at IR = 1 mA
V(BR)R
6
-
-
-
-
9
Reverse Current
at VR = 5 V
IR
100
1.2
nA
V
Forward Voltage
at IF = 10 mA
VF
0.6
Clamping Voltage
at IPP = 1 A , tp = 8/20 µs
at IPP = 4 A , tp = 8/20 µs
ESD Clamping Voltage 1)
at ITLP = 16 A , tp = 100 ns
VC
-
-
-
-
11
15
V
V
VCL
-
19
-
Junction Capacitance
at VR = 0 V, f = 1 MHz, Pin1 or 2 to Pin3
at VR = 0 V, f = 1 MHz, Between Pin1 and Pin2
Cj
-
-
0.4
0.25
0.65
0.4
pF
Dynamic Resistance 1)
RDYN
-
0.65
-
Ω
1) TLP parameter: Z0 = 50 ꢀ , tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to 16A .
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Dated: 27/02/2023 Rev: 02