Datasheet > E5V0UUPG2C

E5V0UUPG2C

更新时间： 2023-12-06 20:07:44

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	202K
描述
静电保护二极管

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E5V0UUPG2C 数据手册

E5V0UUPG2C

ESD Protection Diode

Features

• Ultra-low capacitance

• Ultra-low leakage current

• Low clamping voltage

Bottom view

DFN1006-3H Plastic Package

1. Cathode 2. Cathode 3. Anode

Bottom View

Applications

• Portable Electronics and Notebooks

• SATA and eSATA

• PCI Express

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

Value

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

P_PK

I_PP

Air

Contact

± 20

IEC61000-4-2 (ESD)

V_ESD

Operation Junction Temperature

Storage Temperature Range

T_j

125

℃

T_stg

- 55 to + 150

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

Reverse Current

at V_R= 5 V

I_R

100

1.2

Forward Voltage

at I_F= 10 mA

V_F

0.6

Clamping Voltage

at I_PP= 1 A , tp = 8/20 µs

at I_PP= 4 A , tp = 8/20 µs

ESD Clamping Voltage ¹⁾

at I_PP= 16 A , tp = 100 ns

V_C

V_CL

Junction Capacitance

at V_R= 0 V, f = 1 MHz, Pin1 or 2 to Pin3

at V_R= 0 V, f = 1 MHz, Between Pin1 and Pin2

C_j

0.4

0.25

0.65

0.4

Dynamic Resistance ¹⁾

R_DYN

0.65

Ω

¹⁾TLP parameter: Z₀= 50 ꢀ , t_p= 100ns, t_r= 2ns, averaging window from 60ns to 80ns. R_DYNis calculated from 4A to 16A .

1 / 3

Dated: 27/02/2023 Rev: 03

12 3

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