E5V0UBPH2B
ESD Protection Diode
2
1
2
Features
1
• Low clamping voltage
• Low operating voltage
Bottom view
DFN1006-3B Plastic Package
1. Anode 2. Anode 3. Anode
3
Bottom View
Absolute Maximum Ratings (Ta = 25℃)
Parameter
Symbol
Value
Unit
W
Peak Pulse Power (tp = 8/20 µs)
Peak Pulse Current (tp = 8/20 µs)
PPK
IPP
100
4
A
Air
Contact
± 25
± 23
IEC61000-4-2 (ESD)
VESD
KV
Operation Junction Temperature
Storage Temperature Range
Tj
125
℃
℃
Tstg
- 55 to + 150
Characteristics at Ta = 25℃
Parameter
Symbol
VRWM
Min.
-
Typ.
-
Max.
5
Unit
Working Peak Reverse Voltage
V
V
Reverse Breakdown Voltage
at IR = 1 mA
V(BR)R
6
-
-
-
-
10
100
25
Reverse Current
at VR = 5 V
IR
nA
V
Clamping Voltage
at IPP = 4 A , tp = 8/20 µs
VC
-
ESD Clamping Voltage
at ITLP = 4 A, tp = 0.2/100 ns
at ITLP =16 A, tp = 0.2/100 ns
VCL
-
-
16.7
31.6
-
-
V
Junction Capacitance
at VR = 0 V, f = 1 MHz
Dynamic Resistance 1)
Cj
-
-
-
0.5
-
pF
Rdyn
1.2
Ω
1) Dynamic Resistance calculated from ITLP = 4A to ITLP = 16 A .
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®
Dated: 14/01/2023 Rev : 02