Datasheet > E5V0SBPD1A

E5V0SBPD1A

更新时间： 2023-12-06 20:07:35

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	185K
描述
静电保护二极管

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E5V0SBPD1A 数据手册

E5V0SBPD1A

ESD Protection Diode

PINNING

DESCRIPTION

Anode

Features

Anode

• Low capacitance

Transparent top view

Simplified outline DFN1006-2B and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

Value

180

Unit

Peak Pulse Power (tp = 8/20 µs)

P_PK

I_PP

Peak Pulse Current (tp = 8/20 µs)

IEC61000-4-2 (ESD)

Air

Contact

± 30

V_ESD

Junction Temperature

T_j

125

℃

Storage Temperature Range

T_stg

- 55 to + 150

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

Punch-through Voltage

at I_PT= 2 µA

V_PT

V_SB

I_R

Snap-back Voltage

at I_SB= 100 µA

5.5

Reverse Current

at V_RWM= 5 V

0.1

µA

Clamping Voltage

at I_PP= 1 A , tp = 8/20 µs

at I_PP= 12 A , tp = 8/20 µs

ESD Clamping Voltage

at I_TLP=4 A, tp = 0.2/100 ns

at I_TLP=16 A, tp = 0.2/100 ns

V_C

V_CL

7.2

8.9

Junction Capacitance

at V_R= 0 V , f = 1 MHz

Dynamic Resistance ¹⁾

C_j

R_dyn

0.14

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16 A .

1 / 3

Dated: 29/03/2023 Rev : 02

12 3

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