Datasheet > E5V0MUPM1CM

E5V0MUPM1CM

更新时间： 2023-12-06 19:45:52

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
4页	251K
描述
静电保护二极管

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E5V0MUPM1CM 数据手册

E5V0MUPM1CM

ESD Protection Diode

PINNING

DESCRIPTION

Cathode

Features

• Low leakage current

Anode

Applications

• Portable multimedia, tablets, mobile phone, smart phone

• Power supply protection

Transparent top view

Simplified outline DFN1610-2H and symbol

• Battery protection

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

500

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

I_PP

Air

Contact

± 30

IEC61000-4-2 (ESD)

V_ESD

Operation Temperature Range

Storage Temperature Range

T_j

- 55 to + 125

- 55 to + 150

℃

T_stg

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

6.4

7.5

200

11.5

Reverse Current

at V_RWM= 5 V

I_R

Clamping Voltage

V_C

at I_PP= 45 A , tp = 8/20 µs

ESD Clamping Voltage

at I_TLP= 4 A, tp = 0.2/100 ns

at I_TLP=16 A, tp = 0.2/100 ns

V_CL

7.6

8.3

Junction Capacitance

at V_R= 0 V , f = 1 MHz

Dynamic Resistance ¹⁾

C_j

400

R_dyn

0.06

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16 A .

1 / 4

Dated: 10/11/2021 Rev : 01

12 3 4

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