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E5V0MUPM1CM PDF预览

E5V0MUPM1CM

更新时间: 2024-11-06 14:48:07
品牌 Logo 应用领域
先科 - SWST 二极管
页数 文件大小 规格书
4页 251K
描述
静电保护二极管

E5V0MUPM1CM 数据手册

 浏览型号E5V0MUPM1CM的Datasheet PDF文件第2页浏览型号E5V0MUPM1CM的Datasheet PDF文件第3页浏览型号E5V0MUPM1CM的Datasheet PDF文件第4页 
E5V0MUPM1CM  
ESD Protection Diode  
PINNING  
PIN  
1
DESCRIPTION  
Cathode  
Features  
• Low leakage current  
Anode  
2
1
2
Applications  
• Portable multimedia, tablets, mobile phone, smart phone  
• Power supply protection  
Transparent top view  
Simplified outline DFN1610-2H and symbol  
• Battery protection  
Absolute Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
PPK  
Value  
500  
45  
Unit  
W
Peak Pulse Power (tp = 8/20 µs)  
Peak Pulse Current (tp = 8/20 µs)  
IPP  
A
Air  
Contact  
± 30  
± 30  
IEC61000-4-2 (ESD)  
VESD  
KV  
Operation Temperature Range  
Storage Temperature Range  
Tj  
- 55 to + 125  
- 55 to + 150  
Tstg  
Characteristics at Ta = 25  
Parameter  
Symbol  
VRWM  
Min.  
-
Typ.  
-
Max.  
5
Unit  
Reverse Stand-Off Voltage  
V
V
Reverse Breakdown Voltage  
at IR = 1 mA  
V(BR)R  
6.4  
-
-
-
7.5  
200  
11.5  
Reverse Current  
at VRWM = 5 V  
IR  
-
-
nA  
V
Clamping Voltage  
VC  
at IPP = 45 A , tp = 8/20 µs  
ESD Clamping Voltage  
at ITLP = 4 A, tp = 0.2/100 ns  
at ITLP =16 A, tp = 0.2/100 ns  
VCL  
-
-
7.6  
8.3  
-
-
V
Junction Capacitance  
at VR = 0 V , f = 1 MHz  
Dynamic Resistance 1)  
Cj  
-
-
-
400  
-
pF  
Rdyn  
0.06  
1) Dynamic Resistance calculated from ITLP = 4A to ITLP = 16 A .  
®
1 / 4  
Dated: 10/11/2021 Rev : 01  

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