Datasheet > E5V0MUPC1C

E5V0MUPC1C

更新时间： 2024-11-06 14:54:43

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
4页	226K
描述
静电保护二极管

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中文翻译

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数据手册

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E5V0MUPC1C 数据手册

E5V0MUPC1C

ESD Protection Diode

Features

PINNING

• Low leakage current

• Low clamping voltage

DESCRIPTION

Cathode

Anode

Applications

• Personal digital assistants (PDA s)

• Microprocessor based equipment

• Notebooks, desktops, & servers

• Cell phone handsets and accessories

• Portable instrumentation

Transparent top view

Simplified outline DFN1006-2H and symbol

• Pagers peripherals

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

Symbol

Value

170

Unit

P_PK

I_PP

13.5

Air

Contact

± 30

IEC61000-4-2 (ESD)

V_ESD

Operating Junction Temperature Range

Storage Temperature Range

T_j

- 55 to + 125

- 55 to + 150

℃

T_stg

Characteristics at T_a= 25℃ unless otherwise specified

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

Reverse Current

at V_RWM= 5 V

I_R

500

Clamping Voltage

at I_PP=1 A , tp = 8/20 µs

at I_PP= 13.5 A , tp = 8/20 µs

V_C

12.5

ESD Clamping Voltage

at I_TLP= 4 A, tp = 0.2/100 ns

at I_TLP=16 A, tp = 0.2/100 ns

V_CL

8.1

10.5

Junction Capacitance

at V_R= 0 V , f = 1 MHz

Dynamic Resistance ¹⁾

C_j

120

0.2

R_dyn

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16 A .

1 / 4

Dated : 23/05/2023 Rev : 01

12 3 4

中文翻译

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