E5V0MUKB2C
ESD Protection Diode
3
Features
• Low diode capacitance
• Low clamping voltage
• Ultra low leakage current
1
2
Applications
1. Cathode 2. Cathode 3. Anode
Marking Code : 5F
• Audio and video equipment
• Computers and peripherals
• Cellular handsets and accessories
Absolute Maximum Ratings (at Ta = 25℃ unless otherwise specified)
Parameter
Peak Pulse Power (tp = 8/20 µs)
Peak Pulse Current (tp = 8/20 µs)
Symbol
Value
70
Unit
W
PPK
IPP
6
A
Air
Contact
±30
±30
ESD Discharge (IEC61000-4-2)
VESD
KV
Junction Temperature
Tj
150
℃
℃
Storage Temperature Range
Tstg
- 65 to + 150
Characteristics (at Ta = 25℃ unless otherwise specified)
Parameter
Symbol
VRWM
Min.
-
Typ.
-
Max.
5
Unit
Reverse Working Voltage
V
V
Reverse Breakdown Voltage
at IR = 5 mA
V(BR)R
5.8
-
6.7
Reverse Current
at VR = 4 V
at VR = 5 V
Clamping Voltage 3)4)
at IPP = 5.5 A, tp = 8/20 µs
IR
VC
Cj
-
-
20
430
90
-
nA
V
-
-
13
Junction Capacitance
at VR = 0 V, f = 1 MHz 1)
at VR = 0 V, f = 1 MHz 2)
-
-
22
45
26
50
pF
1) Bidirectional configuration: measured from pin 1 to 2 or pin 2 to 1.
2) Unidirectional configuration: measured from pin 1 to 3 or pin 2 to 3.
3) Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
4) Measured from pin 1 or 2 to pin 3.
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®
Dated: 15/03/2021 Rev : 01