E5V0MUD2S
ESD Protection Diode
Features
• Low current leakage
• Low capacitance
4
5
6
1. NC 2. GND 3. NC
4. I/O 5. GND 6. I/O
SOT-26 Plastic Package
1
3
2
Absolute Maximum Ratings (Ta = 25℃)
Parameter
Symbol
PPK
Value
Unit
W
Peak Pulse Power (tp = 8/20 µs)
Peak Pulse Current (tp = 8/20 µs)
ESD per IEC 61000-4-2
100
8
IPP
A
Air
Contact
± 30
± 30
VESD
KV
Operating Junction Temperature Range
Storage Temperature Range
Tj
- 55 to + 125
- 55 to + 150
℃
℃
Tstg
Characteristics at Ta = 25℃
Parameter
Symbol
VRWM
Min.
-
Typ.
-
Max.
5
Unit
Reverse Stand-Off Voltage
V
V
Reverse Breakdown Voltage
at IR = 1 mA, Any I/O to GND
V(BR)R
6
-
-
-
-
Reverse Current
at VR = 5 V, Any I/O to GND
IR
0.5
µA
V
Clamping Voltage
at IPP = 1 A, tp = 8/20 µs, Any I/O to GND
at IPP = 8 A, tp = 8/20 µs, Any I/O to GND
-
-
-
-
9
12.5
VC
ESD Clamping Voltage
at ITLP = 4 A, tp = 0.2/100 ns, Any I/O to GND
at ITLP =16 A, tp = 0.2/100 ns, Any I/O to GND
VCL
-
-
7.9
9.1
-
-
V
Junction Capacitance
at VR = 0 V, f = 1 MHz
Dynamic Resistance 1)
67
-
-
Cj
-
-
pF
Rdyn
0.1
Ω
1)
Dynamic Resistance calculated from ITLP = 4 A to ITLP = 16 A.
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®
Dated: 03/02/2023 Rev : 01