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E5V0MUD2S PDF预览

E5V0MUD2S

更新时间: 2023-12-06 20:13:36
品牌 Logo 应用领域
先科 - SWST 二极管
页数 文件大小 规格书
3页 209K
描述
静电保护二极管

E5V0MUD2S 数据手册

 浏览型号E5V0MUD2S的Datasheet PDF文件第2页浏览型号E5V0MUD2S的Datasheet PDF文件第3页 
E5V0MUD2S  
ESD Protection Diode  
Features  
• Low current leakage  
• Low capacitance  
4
5
6
1. NC 2. GND 3. NC  
4. I/O 5. GND 6. I/O  
SOT-26 Plastic Package  
1
3
2
Absolute Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
PPK  
Value  
Unit  
W
Peak Pulse Power (tp = 8/20 µs)  
Peak Pulse Current (tp = 8/20 µs)  
ESD per IEC 61000-4-2  
100  
8
IPP  
A
Air  
Contact  
± 30  
± 30  
VESD  
KV  
Operating Junction Temperature Range  
Storage Temperature Range  
Tj  
- 55 to + 125  
- 55 to + 150  
Tstg  
Characteristics at Ta = 25℃  
Parameter  
Symbol  
VRWM  
Min.  
-
Typ.  
-
Max.  
5
Unit  
Reverse Stand-Off Voltage  
V
V
Reverse Breakdown Voltage  
at IR = 1 mA, Any I/O to GND  
V(BR)R  
6
-
-
-
-
Reverse Current  
at VR = 5 V, Any I/O to GND  
IR  
0.5  
µA  
V
Clamping Voltage  
at IPP = 1 A, tp = 8/20 µs, Any I/O to GND  
at IPP = 8 A, tp = 8/20 µs, Any I/O to GND  
-
-
-
-
9
12.5  
VC  
ESD Clamping Voltage  
at ITLP = 4 A, tp = 0.2/100 ns, Any I/O to GND  
at ITLP =16 A, tp = 0.2/100 ns, Any I/O to GND  
VCL  
-
-
7.9  
9.1  
-
-
V
Junction Capacitance  
at VR = 0 V, f = 1 MHz  
Dynamic Resistance 1)  
67  
-
-
Cj  
-
-
pF  
Rdyn  
0.1  
1)  
Dynamic Resistance calculated from ITLP = 4 A to ITLP = 16 A.  
1 / 3  
®
Dated: 03/02/2023 Rev : 01  

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