Datasheet > E5V0MBWT1AB

E5V0MBWT1AB

更新时间： 2023-12-06 20:08:02

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	221K
描述
静电保护二极管

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E5V0MBWT1AB 数据手册

E5V0MBWT1AB

ESD Protection Diode

PINNING

Features

• Low leakage current

• Low clamping voltage

DESCRIPTION

Anode

Applications

• Microprocessor based equipment

• Notebooks, Desktops, and Servers

• Portable Instrumentation

Top View

Simplified outline SOD-523 and symbol

• Pagers Peripherals

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

400

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

IEC61000-4-2 (ESD)

I_PP

Air

Contact

± 25

V_ESD

Junction Temperature Range

Storage Temperature Range

T_j

- 55 to + 125

- 55 to + 150

℃

T_stg

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

Reverse Current

at V_RWM= 5 V

I_R

µA

Clamping Voltage

V_C

at I_PP= 20 A, tp = 8/20 µs

ESD Clamping Voltage

at I_TLP= 4 A, tp = 100 ns, tn = 0.2 ns

at I_TLP=16 A, tp = 100 ns, tn = 0.2 ns

V_CL

5.9

6.5

Junction Capacitance

at V_R= 0 V, f = 1 MHz

Dynamic Resistance ¹⁾

C_j

R_dyn

0.05

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16A

1 / 3

Dated: 16/12/2022 Rev: 01

12 3

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