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E5V0MBPD1A PDF预览

E5V0MBPD1A

更新时间: 2024-11-21 14:53:59
品牌 Logo 应用领域
先科 - SWST 二极管
页数 文件大小 规格书
3页 200K
描述
静电保护二极管

E5V0MBPD1A 数据手册

 浏览型号E5V0MBPD1A的Datasheet PDF文件第2页浏览型号E5V0MBPD1A的Datasheet PDF文件第3页 
E5V0MBPD1A  
ESD Protection Diode  
PINNING  
DESCRIPTION  
Anode  
PIN  
1
Anode  
2
Features  
• Low clamping voltage  
• Low reverse current  
1
2
Transparent top view  
Simplified outline DFN1006-2B and symbol  
Absolute Maximum Ratings (at Ta = 25unless otherwise specified)  
Parameter  
Peak Pulse Power (tp = 8/20 µs)  
Peak Pulse Current (tp = 8/20 µs)  
Symbol  
Value  
500  
40  
Unit  
W
PPK  
IPP  
A
Air  
Contact  
± 30  
± 30  
ESD (IEC61000-4-2)  
VESD  
KV  
Operating Junction Temperature Range  
Storage Temperature Range  
Tj  
- 55 to + 125  
- 55 to + 150  
Tstg  
Characteristics at Ta = 25unless otherwise specified  
Parameter  
Symbol  
VRWM  
Min.  
-
Typ.  
-
Max.  
4.5  
Unit  
Reverse Stand-Off Voltage  
V
V
Reverse Breakdown Voltage  
at IR = 1 mA  
V(BR)R  
4.8  
-
-
-
-
Reverse Current  
at VRWM = 4.5 V  
IR  
0.2  
µA  
V
Clamping Voltage  
at IPP = 1 A , tp = 8/20 µs  
at IPP = 20 A , tp = 8/20 µs  
at IPP = 40 A , tp = 8/20 µs  
-
-
-
-
-
-
6
9
12.5  
VC  
ESD Clamping Voltage  
at ITLP = 4 A, tp = 0.2/100 ns  
at ITLP =16 A, tp = 0.2/100 ns  
VCL  
-
-
5.8  
6.5  
-
-
V
Junction Capacitance  
at VR = 0 V, f = 1 MHz  
Dynamic Resistance 1)  
Cj  
-
-
90  
150  
-
pF  
Rdyn  
0.06  
1) Dynamic Resistance calculated from ITLP = 4A to ITLP = 16 A .  
1 / 3  
®
Dated : 01/08/2023 Rev : 02  

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