E5V0MBPD1A
ESD Protection Diode
PINNING
DESCRIPTION
Anode
PIN
1
Anode
2
Features
• Low clamping voltage
• Low reverse current
1
2
Transparent top view
Simplified outline DFN1006-2B and symbol
Absolute Maximum Ratings (at Ta = 25℃ unless otherwise specified)
Parameter
Peak Pulse Power (tp = 8/20 µs)
Peak Pulse Current (tp = 8/20 µs)
Symbol
Value
500
40
Unit
W
PPK
IPP
A
Air
Contact
± 30
± 30
ESD (IEC61000-4-2)
VESD
KV
Operating Junction Temperature Range
Storage Temperature Range
Tj
- 55 to + 125
- 55 to + 150
℃
℃
Tstg
Characteristics at Ta = 25℃ unless otherwise specified
Parameter
Symbol
VRWM
Min.
-
Typ.
-
Max.
4.5
Unit
Reverse Stand-Off Voltage
V
V
Reverse Breakdown Voltage
at IR = 1 mA
V(BR)R
4.8
-
-
-
-
Reverse Current
at VRWM = 4.5 V
IR
0.2
µA
V
Clamping Voltage
at IPP = 1 A , tp = 8/20 µs
at IPP = 20 A , tp = 8/20 µs
at IPP = 40 A , tp = 8/20 µs
-
-
-
-
-
-
6
9
12.5
VC
ESD Clamping Voltage
at ITLP = 4 A, tp = 0.2/100 ns
at ITLP =16 A, tp = 0.2/100 ns
VCL
-
-
5.8
6.5
-
-
V
Junction Capacitance
at VR = 0 V, f = 1 MHz
Dynamic Resistance 1)
Cj
-
-
90
150
-
pF
Rdyn
0.06
Ω
1) Dynamic Resistance calculated from ITLP = 4A to ITLP = 16 A .
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®
Dated : 01/08/2023 Rev : 02