Datasheet > E5V0LBPD1A

E5V0LBPD1A

更新时间： 2023-12-06 20:08:29

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	188K
描述
静电保护二极管

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E5V0LBPD1A 数据手册

E5V0LBPD1A

ESD Protection Diode

PINNING

DESCRIPTION

Anode

Features

Anode

• Very low capacitance

• Low leakage current

Transparent top view

Simplified outline DFN1006-2B and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

I_PP

3.2

Air

Contact

ESD (IEC61000-4-2)

V_ESD

± 30

Operating Junction Temperature Range

Storage Temperature Range

T_j

- 55 to + 125

- 55 to + 150

℃

T_stg

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

8.5

Reverse Current

at V_RWM= 5 V

I_R

100

Clamping Voltage

at I_PP= 1 A, tp = 8/20 µs

at I_PP= 3.2 A, tp = 8/20 µs

V_C

10.5

ESD Clamping Voltage

at I_TLP= 4 A, tp = 0.2/100 ns

at I_TLP=16 A, tp = 0.2/100 ns

V_CL

11.1

13.4

Junction Capacitance

at V_R= 0 V, f = 1 MHz

Dynamic Resistance ¹⁾

C_j

R_dyn

0.2

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16 A .

1 / 3

Dated: 31/07/2023 Rev : 03

12 3

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