Datasheet > E5V0HBPD1A

E5V0HBPD1A

更新时间： 2023-12-06 20:03:13

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	240K
描述
静电保护二极管

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E5V0HBPD1A 数据手册

E5V0HBPD1A

ESD Protection Diode

PINNING

Features

DESCRIPTION

Anode

• Bi-direction high reliability

Anode

Applications

• Cellular Handsets

• Portable Electronics

• Computers and Peripheral

Transparent top view

Simplified outline DFN1006-2B and symbol

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

Symbol

Value

430

Unit

P_PK

I_PP

Air

Contact

± 30

ESD (IEC61000-4-2)

V_ESD

Operating Junction Temperature Range

Storage Temperature Range

T_j

- 55 to + 125

- 55 to + 150

℃

T_stg

Characteristics at T_a= 25℃ unless otherwise specified

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

Reverse Current

at V_RWM= 5 V

I_R

0.5

µA

Clamping Voltage

V_C

8.5

14.5

at I_PP= 1 A , tp = 8/20 µs

at I_PP= 34 A , tp = 8/20 µs

ESD Clamping Voltage

at I_TLP= 4 A, tp = 0.2/100 ns

at I_TLP=16 A, tp = 0.2/100 ns

V_CL

7.3

8.3

Junction Capacitance

at V_R= 0 V, f = 1 MHz

Dynamic Resistance ¹⁾

C_j

130

R_dyn

0.08

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16 A .

1 / 3

Dated : 14/07/2023 Rev : 02

12 3

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