Datasheet > E3V3VUPU4DR

E3V3VUPU4DR

更新时间： 2023-12-06 20:03:59

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	196K
描述
静电保护二极管

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E3V3VUPU4DR 数据手册

E3V3VUPU4DR

ESD Protection Diode

Features

Pin 1

Pin 2

Pin 4

Pin 5

• 4 Channels of ESD protection

• Low reverse current

Pin 3, 8

1.I/O1 2. I/O2 3. GND 4. I/O3 5. I/O4

6. NC 7. NC 8. GND 9. NC 10. NC

DFN2510-10 Plastic Package

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

I_PP

Value

Unit

Peak Pulse Current (tp = 8/20 µs)

ESD per IEC 61000-4-2

Air

Contact

± 20

± 15

V_ESD

Operation Junction Temperature Range

Storage Temperature Range

T_j

- 55 to + 125

- 55 to + 150

℃

T_stg

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

3.3

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)

0.5

1.2

11.5

Reverse Current

at V_R= 3.3 V

I_R

V_F

µA

Forward Voltage

at I_F= 15 mA

Clamping Voltage

at I_PP= 4 A , tp = 8/20 µs, I/O Pin to GND

ESD Clamping Voltage ¹⁾

at I_TLP= 16 A , tp = 0.2/100 ns, I/O Pin to GND

Dynamic Resistance ²⁾

at I/O Pin to GND

V_C

V_CL

R_DYN

C_j

14.2

0.67

Ω

Junction Capacitance

at V_R= 1.65 V, f = 1 MHz

0.65

¹⁾TLP conditions : tp = 100 ns ,tr = 0.2 ns, I_TLPand V_TLPaveraging window : t₁= 70 ns to t₂= 90 ns.

²⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16 A .

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Dated: 27/05/2022 Rev : 03

12 3

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