Datasheet > E3V3VUPU4DM

E3V3VUPU4DM

更新时间： 2023-12-06 20:07:46

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	251K
描述
静电保护二极管

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E3V3VUPU4DM 数据手册

E3V3VUPU4DM

4 Channel ESD Protection Diode Array

Features

• Low capacitance

• Low leakage current

• Low clamping voltage

Pin 1

Pin 2

Pin 4

Pin 5

Pin 3, 8

1. I/O1 2. I/O2 3. GND 4. I/O3 5. I/O4

6. NC 7. NC 8. GND 9. NC 10.NC

DFN2510-10 Plastic package

Applications

• Display port interface

• LVDS interface

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

I_PP

ESD per IEC 61000-4-2 (Air)

ESD per IEC 61000-4-2 (Contact)

± 16

± 12

V_ESD

Operation Temperature Range

Storage Temperature Range

T_j

- 55 to + 125

- 55 to + 150

℃

T_stg

Characteristics at T_a= 25℃

Parameter

Typ.

Symbol

Min.

Max.

3.3

Unit

Reverse Stand-Off Voltage

at Pin 1, 2, 4 , 5 to GND

V_RWM

V_(BR)R

I_R

Reverse Breakdown Voltage

at I_R= 1 mA , Pin 1, 2, 4 , 5 to GND

5.5

Reverse Current

200

7.5

at V_RWM= 3.3 V, Pin 1, 2, 4, 5 to GND

Clamping Voltage

V_C

at I_PP= 7 A , tp = 8/20 µs, Pin 1, 2, 4, 5 to GND

Clamping Voltage

at I_TLP= 4 A , tp = 100 ns, Pin 1, 2, 4, 5 to GND

at I_TLP= 16 A , tp = 100 ns, Pin 1, 2, 4, 5 to GND

Dynamic Resistance

at I_TLP= 4 A to 16 A

Junction Capacitance

V_CL

2.8

6.5

0.31

R_DNY

C_j

0.5

0.8

at V_R= 1.65 V, f = 1 MHz , Pin 1, 2, 4, 5 to GND

1 / 3

Dated: 05/06/2021 Rev: 02

12 3

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