Datasheet > E3V3MBWB1A

E3V3MBWB1A

更新时间： 2023-12-06 20:08:13

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	209K
描述
静电保护二极管

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E3V3MBWB1A 数据手册

E3V3MBWB1A

ESD Protection Diode

PINNING

DESCRIPTION

Anode

Features

• Low leakage current

Anode

Top View

Applications

Simplified outline SOD-323(Bend Lead) and symbol

• Notebooks, Desktops, and Servers

• Networking and Telecom

• Cell Phone Handsets and Accessories

• Microprocessor based equipment

Absolute Maximum Ratings (at T_a= 25℃)

Parameter

Symbol

P_PK

Value

500

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

I_PP

Air

Contact

± 30

IEC61000-4-2 (ESD)

V_ESD

Operating Junction Temperature

Storage Temperature Range

T_j

125

℃

T_stg

- 55 to + 150

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

3.3

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

7.5

Reverse Current

at V_RWM= 3.3 V

I_R

µA

Clamping Voltage

at I_PP= 25 A, tp = 8/20 µs

V_C

ESD Clamping Voltage

at I_TLP= 4 A, tp = 0.2/100 ns

at I_TLP=16 A, tp = 0.2/100 ns

V_CL

8.2

11.9

Junction Capacitance

at V_R= 0 V, f = 1 MHz

Dynamic Resistance ¹⁾

C_j

100

R_dyn

0.31

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16 A.

1 / 3

Dated : 21/02/2023 Rev: 02

12 3

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