E3V3HUKA1H
ESD Protection Diode
3
Features
• Ultra-high capacitance
1
2
1. Anode 2. NC 3. Cathode
SOT-23 Plastic Package
Absolute Maximum Ratings (at Ta = 25℃)
Parameter
Symbol
PPK
Value
369
30
Unit
W
Peak Pulse Power (tp = 8/20 µs)
Peak Pulse Current (tp = 8/20 µs)
IPP
A
Air
Contact
± 30
± 30
IEC61000-4-2 (ESD)
VESD
KV
Operating Junction Temperature Range
Storage Temperature Range
Tj
- 55 to + 125
- 55 to + 150
℃
℃
Tstg
Characteristics at Ta = 25℃ unless otherwise specified
Parameter
Symbol
VRWM
Min.
-
Typ.
-
Max.
3.3
Unit
Reverse Stand-Off Voltage
V
V
Reverse Breakdown Voltage
at IR = 1 mA
V(BR)R
4
-
-
-
6.5
Reverse Current
at VRWM = 3.3 V
IR
100
µA
V
Clamping Voltage
at IPP = 1 A , tp = 8/20 µs
at IPP = 30 A , tp = 8/20 µs
VC
-
-
-
-
7.5
12.3
ESD Clamping Voltage
at ITLP = 4 A, tp = 0.2/100 ns
at ITLP =16 A, tp = 0.2/100 ns
VCL
-
-
6.3
7.5
-
-
V
Junction Capacitance
at VR = 0 V , f = 1 MHz
Dynamic Resistance 1)
Cj
-
-
-
600
-
pF
Ω
Rdyn
0.1
1) Dynamic Resistance calculated from ITLP = 4A to ITLP = 16 A.
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®
Dated: 27/12/2022 Rev: 02