Datasheet > E3V0SUD5B

E3V0SUD5B

更新时间： 2023-12-06 20:08:01

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	207K
描述
静电保护二极管

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E3V0SUD5B 数据手册

E3V0SUD5B

ESD Protection Array Diode

Features

• Low leakage current

Applications

• Computers

1. I/O1 2. GND 3. I/O2

4. I/O3 5. I/O4 6. I/O5

Marking Code: G3

• Printers

SOT-26 Plastic package

• Communication systems

• Cellular phone handsets and accessories

• Set top boxes

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

I_PP

7.5

ESD per IEC 61000-4-2 (Air)

ESD per IEC 61000-4-2 (Contact)

± 15

± 8

V_ESD

Operation Junction Temperature Range

Storage Temperature Range

T_j

- 55 to + 125

- 55 to + 150

℃

T_stg

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

6.1

7.2

Reverse Current

at V_R= 3 V

I_R

µA

Clamping Voltage

at I_PP= 5 A , tp = 8/20 µs

at I_PP= 7.5 A , tp = 8/20 µs

9.8

12.5

V_C

ESD Clamping Voltage

at I_TLP= 4 A, tp = 0.2/100 ns

at I_TLP=16 A, tp = 0.2/100 ns

V_C

9.4

13.2

Junction Capacitance

at V_R= 0 V, f = 1 MHz

Dynamic Resistance ¹⁾

C_j

R_dyn

0.32

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16 A .

1 / 3

Dated: 06/05/2021 Rev : 01

12 3

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