E3JK-R4M2-US

更新时间： 2024-11-23 13:07:31

品牌	Logo	应用领域
欧姆龙 - OMRON		光电传感器
页数	文件大小	规格书
8页	1481K
描述
Analog Circuit

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

E3JK-R4M2-US 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
HTS代码：	8542.39.00.01	风险等级：	5.83
Base Number Matches：	1

E3JK-R4M2-US 数据手册

All voltage photoelectric sensors

E3JK

• Built-in amplifier accepts wide supply

voltage range.

• Slim, space-saving construction mea-

sures only 50 x 50 x 17.4 mm.

• Relay outputs with long life expectan-

cy and high switching capacity (3 A,

250 V AC).

• Polarized retroreflective type available

for glossy or shiny object detection.

Connection

method

Sensor type

Shape

Sensing distance

Output form

Light ON

Output

Relay output

Model

E3JK-5M1

Through-beam

Dark ON

Light ON

Dark ON

E3JK-5M2

E3JK-R2M1

E3JK-R2M2

E3JK-R2S3

E3JK-R2R3

E3JK-R4M1

E3JK-R4M2

Retroreflective

model (with

M.S.R. function)

2.5m

(3m)

NPN

PNP

Light ON/Dark ON DC transistor

(selectable)

Light ON

Dark ON

output

Pre-wired

models

Relay output

Retroreflective

model (without

M.S.R. function)

(5m) Light ON/Dark ON DC transistor output

E3JK-R4S3

(selectable)

Light ON

Dark ON

(NPN)

E3JK-DS30M1

E3JK-DS30M2

Relay output

Diffuse-reflective

300mm

Light ON/Dark ON DC transistor output

(selectable) (NPN)

E3JK-DS30S3

* The value within the parentheses indicates the sensing distance applied when the E39-R2 reflector is used.

Note: The UL-listed model ends with "-US". (Example: E3JK-5M1-US). Note that the DC transistor type of the E3JK is UL-unlisted.

Accessories (Order Separately)

Slits

Minimum sensing

object (typical)

Slit width

Sensing distance

Model

Quantity

Remarks

1 pc. each for emitter (Seal type long slit)

Width 1 mmx20 mm E3JK-5##

0.7 m

1 mm dia.

E39-S39

and receiver

(total 2 pcs.)

Can be used with the through-

beam model E3JK-5##.

Reflectors

Name

Sensing distance (typical)

Model

Quantity

Remarks

E3JK-R2##

2.5 m (rated value)

4 m (rated value)

3 m

Attached to the E3JK-R2##.

Attached to the E3JK-R4##.

E39-R1

E3JK-R4##

E3JK-R2##

E3JK-R4##

E3JK-R2##

Reflectors

E39-R2

---

5 m

Small reflector

Tape Reflector

1 m (5 mm) *

750 mm (200 mm) *

1.2 m (200 mm) *

1.5 m (200 mm) *

E39-R3

E39-RS1

E39-RS2

E39-RS3

The M.S.R. function is available.

* Values in parentheses indicate the minimum required distance between the sensor and reflector.

Note: When the reflector used is other than the supplied one, set the sensing distance to about 0.7 times of the typical example as a guideline.

E3JK

12 3 4 5 6 7 8

中文翻译

下载PDF

与E3JK-R4M2-US相关器件

型号	品牌	获取价格	描述	数据表
E3JK-R4S3	OMRON	获取价格	All voltage photoelectric sensors
E3JK-R4S32M	OMRON	获取价格	Built-in Power Supply Photoelectric Sensor
E3JM	OMRON	获取价格	Universal Voltage Terminal Photoelectric
E3JM-10M4-N	OMRON	获取价格	Built-in Power Supply Photoelectric Sensor
E3JM-10M4T-N	OMRON	获取价格	Built-in Power Supply Photoelectric Sensor
E3JM-10M4T-US	OMRON	获取价格	Analog Circuit
E3JM-10M4-US	OMRON	获取价格	Universal Voltage Terminal Photoelectric
E3JM-10R4-US	OMRON	获取价格	Universal Voltage Terminal Photoelectric
E3JM-10S4-N	OMRON	获取价格	Built-in Power Supply Photoelectric Sensor
E3JM-10S4T-N	OMRON	获取价格	Built-in Power Supply Photoelectric Sensor

与E3JK-R4M2-US相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

35
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

26
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

54
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

52

产品中心

服务支持

精选活动

关于我们

帮助中心

E3JK-R4M2-US

E3JK-R4M2-US 技术参数

E3JK-R4M2-US 数据手册

与E3JK-R4M2-US相关器件

与E3JK-R4M2-US相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

E3JK-R4M2-US

E3JK-R4M2-US 技术参数

E3JK-R4M2-US 数据手册

与E3JK-R4M2-US相关器件

与E3JK-R4M2-US相关文章

您还可以找

您在本页遇到什么问题？