Datasheet > E28F008S5-90

E28F008S5-90

更新时间： 2024-02-15 21:36:12

品牌	Logo	应用领域
恒忆 - NUMONYX		光电二极管
页数	文件大小	规格书
38页	411K
描述
Flash, 1MX8, 90ns, PDSO40, 10 X 20 MM, TSOP-40

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技术参数
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E28F008S5-90 技术参数

生命周期：	Obsolete	零件包装代码：	TSOP
包装说明：	10 X 20 MM, TSOP-40	针数：	40
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.32.00.51	风险等级：	5.32
Is Samacsys：	N	最长访问时间：	90 ns
JESD-30 代码：	R-PDSO-G40	长度：	18.4 mm
内存密度：	8388608 bit	内存集成电路类型：	FLASH
内存宽度：	8	功能数量：	1
端子数量：	40	字数：	1048576 words
字数代码：	1000000	工作模式：	ASYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	1MX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSOP1	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE	并行/串行：	PARALLEL
编程电压：	5 V	认证状态：	Not Qualified
座面最大高度：	1.2 mm	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子形式：	GULL WING
端子节距：	0.5 mm	端子位置：	DUAL
类型：	NOR TYPE	宽度：	10 mm
Base Number Matches：	1

E28F008S5-90 数据手册

PRELIMINARY

5 VOLT FlashFile™ MEMORY

28F004S5, 28F008S5, 28F016S5 (x8)

SmartVoltage Technology

High-Density 64-Kbyte Symmetrical

Erase Block Architecture

4 Mbit: Eight Blocks

5 Volt Flash: 5 V V_CCand 5 V or

12 V V_PP

8 Mbit: Sixteen Blocks

16 Mbit: Thirty-Two Blocks

High-Performance

85 ns Read Access Time

Extended Cycling Capability

100,000 Block Erase Cycles

Enhanced Data Protection Features

Absolute Protection with V_PP= GND

Flexible Block Locking

Low Power Management

Block Write Lockout during Power

Transitions

Deep Power-Down Mode

Automatic Power Savings Mode

Decreases I_CCin Static Mode

Enhanced Automated Suspend Options

Program Suspend to Read

Automated Program and Block Erase

Command User Interface

Status Register

Block Erase Suspend to Program

Block Erase Suspend to Read

Industry-Standard Packaging

40-Lead TSOP, 44-Lead PSOP

SRAM-Compatible Write Interface

ETOX™ V Nonvolatile Flash

Technology

28F016S5 Available with Device Code

for 28F016SA

The Intel^®5 Volt FlashFile™ memory renders a variety of density offerings in the same package. The 4-, 8-,

and 16-Mbit FlashFile memories provide high-density, low-cost, nonvolatile, read/write storage solutions for a

wide range of applications. Their symmetrically-blocked architecture, flexible voltage, and extended cycling

provide highly flexible components suitable for resident flash arrays, SIMMs, and memory cards. Enhanced

suspend capabilities provide an ideal solution for code or data storage applications. For secure code storage

applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM,

the 4-, 8-, and 16-Mbit FlashFile memories offer three levels of protection: absolute protection with V_PPat

GND, selective hardware block locking, or flexible software block locking. These alternatives give designers

ultimate control of their code security needs.

This family of products is manufactured on Intel^®0.4 µm ETOX™ V process technology. They come in

industry-standard packages: the 40-lead TSOP, ideal for board-constrained applications, and the rugged

44-lead PSOP. Based on the 28F008SA architecture, the 5 Volt FlashFile memory family enables quick and

easy upgrades for designs that demand state-of-the-art technology.

NOTE: This document formerly known as Byte-Wide Smart 5 FlashFile™ Memory Family 4, 8, and 16 Mbit.

August 1999

Order Number: 290597-006

12 3 4 5 6 7...38

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与E28F008S5-90相关器件

型号	品牌	获取价格	描述	数据表
E28F008SA-120	INTEL	获取价格	8-MBIT (1-MBIT x 8) FlashFileTM MEMORY
E28F008SA-85	INTEL	获取价格	8-MBIT (1-MBIT x 8) FlashFileTM MEMORY
E28F008SA-90	ETC	获取价格	x8 Flash EEPROM
E28F008SA-L200	ETC	获取价格	x8 Flash EEPROM
E28F008SC-120	INTEL	获取价格	BYTE-WIDE SmartVoltage FlashFile⑩ MEMORY FAMI
E28F008SC-170	NUMONYX	获取价格	Flash, 1MX8, 170ns, PDSO40, 10 X 20 MM, TSOP-40
E28F008SC-85	INTEL	获取价格	BYTE-WIDE SmartVoltage FlashFile⑩ MEMORY FAMI
E28F008SC-L150	INTEL	获取价格	Flash, 1MX8, 90ns, PDSO40, 10 X 20 MM, TSOP-40
E28F010	ETC	获取价格	E28F010
E28F010-100V05	INTEL	获取价格	Flash, 128KX8, 100ns, PDSO32

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