Datasheet > 存储 > 闪存> E28F008S5-85

E28F008S5-85

更新时间： 2024-01-09 06:46:00

品牌	Logo	应用领域
英特尔 - INTEL		闪存存储内存集成电路光电二极管
页数	文件大小	规格书
37页	505K
描述
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT

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技术参数
数据手册

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E28F008S5-85 技术参数

生命周期：	Contact Manufacturer	包装说明：	TSSOP,
Reach Compliance Code：	unknown	HTS代码：	8542.32.00.51
风险等级：	5.78	Is Samacsys：	N
最长访问时间：	85 ns	其他特性：	USER-SELECTABLE 5V OR 12V VPP
JESD-30 代码：	R-PDSO-G40	JESD-609代码：	e0
长度：	18.4 mm	内存密度：	8388608 bit
内存集成电路类型：	FLASH	内存宽度：	8
功能数量：	1	端子数量：	40
字数：	1048576 words	字数代码：	1000000
工作模式：	ASYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	1MX8
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSSOP
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行：	PARALLEL	编程电压：	5 V
座面最大高度：	1.2 mm	最大供电电压 (Vsup)：	5.25 V
最小供电电压 (Vsup)：	4.75 V	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	技术：	MOS
温度等级：	COMMERCIAL	端子面层：	TIN LEAD
端子形式：	GULL WING	端子节距：	0.5 mm
端子位置：	DUAL	类型：	NOR TYPE
宽度：	10 mm	Base Number Matches：	1

E28F008S5-85 数据手册

PRODUCT PREVIEW

BYTE-WIDE

SMART 5 FlashFile™ MEMORY FAMILY

4, 8, AND 16 MBIT

28F004S5, 28F008S5, 28F016S5

Includes Commercial and Extended Temperature Specifications

SmartVoltage Technology

Smart 5 Flash: 5V V_CCand 5V or

High-Density 64-Kbyte Symmetrical

Erase Block Architecture

12V V_PP

4 Mbit: Eight Blocks

8 Mbit: Sixteen Blocks

16 Mbit: Thirty-Two Blocks

High-Performance

4, 8 Mbit: 85 ns Read Access Time

16 Mbit: 95 ns Read Access Time

Extended Cycling Capability

100,000 Block Erase Cycles

Enhanced Data Protection Features

Absolute Protection with V_PP= GND

Flexible Block Locking

Low Power Management

Deep Power-Down Mode

Block Write Lockout during Power

Transitions

Automatic Power Savings Mode

Decreases I_CCin Static Mode

Enhanced Automated Suspend Options

Program Suspend to Read

Automated Program and Block Erase

Command User Interface

Status Register

Block Erase Suspend to Program

Block Erase Suspend to Read

SRAM-Compatible Write Interface

Industry-Standard Packaging

40-Lead TSOP, 44-Lead PSOP

ETOX™ V Nonvolatile Flash

Technology

Intel’s byte-wide Smart 5 FlashFile™ memory family renders a variety of density offerings in the same

package. The 4-, 8-, and 16-Mbit byte-wide FlashFile memories provide high-density, low-cost, nonvolatile,

read/write storage solutions for a wide range of applications. Their symmetrically-blocked architecture, flexible

voltage, and extended cycling provide highly flexible components suitable for resident flash arrays, SIMMs,

and memory cards. Enhanced suspend capabilities provide an ideal solution for code or data storage

applications. For secure code storage applications, such as networking, where code is either directly

executed out of flash or downloaded to DRAM, the 4-, 8-, and 16-Mbit FlashFile memories offer three levels

of protection: absolute protection with V_PPat GND, selective hardware block locking, or flexible software

block locking. These alternatives give designers ultimate control of their code security needs.

This family of products is manufactured on Intel’s 0.4 µm ETOX™ V process technology. They come in

industry-standard packages: the 40-lead TSOP, ideal for board-constrained applications, and the rugged

44-lead PSOP. Based on the 28F008SA architecture, the byte-wide Smart 5 FlashFile memory family

enables quick and easy upgrades for designs that demand state-of-the-art technology.

June 1997

Order Number: 290597-003

12 3 4 5 6 7...37

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与E28F008S5-85相关器件

型号	品牌	获取价格	描述	数据表
E28F008S5-90	NUMONYX	获取价格	Flash, 1MX8, 90ns, PDSO40, 10 X 20 MM, TSOP-40
E28F008SA-120	INTEL	获取价格	8-MBIT (1-MBIT x 8) FlashFileTM MEMORY
E28F008SA-85	INTEL	获取价格	8-MBIT (1-MBIT x 8) FlashFileTM MEMORY
E28F008SA-90	ETC	获取价格	x8 Flash EEPROM
E28F008SA-L200	ETC	获取价格	x8 Flash EEPROM
E28F008SC-120	INTEL	获取价格	BYTE-WIDE SmartVoltage FlashFile⑩ MEMORY FAMI
E28F008SC-170	NUMONYX	获取价格	Flash, 1MX8, 170ns, PDSO40, 10 X 20 MM, TSOP-40
E28F008SC-85	INTEL	获取价格	BYTE-WIDE SmartVoltage FlashFile⑩ MEMORY FAMI
E28F008SC-L150	INTEL	获取价格	Flash, 1MX8, 90ns, PDSO40, 10 X 20 MM, TSOP-40
E28F010	ETC	获取价格	E28F010

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