E24SBPD1A
ESD Protection Diode
PINNING
DESCRIPTION
Anode
PIN
1
Features
Anode
2
• Low capacitance
• Low leakage current
1
2
Transparent top view
Simplified outline DFN1006-2B and symbol
Absolute Maximum Ratings (Ta = 25℃)
Parameter
Symbol
Value
100
2
Unit
Peak Pulse Power (tp = 8/20 µs)
Peak Pulse Current (tp = 8/20 µs)
PPK
IPP
W
A
Air
Contact
± 13
± 8
ESD (IEC61000-4-2)
VESD
KV
Operating Junction Temperature Range
Storage Temperature Range
Tj
- 40 to + 85
℃
℃
Tstg
- 55 to + 150
Characteristics at Ta = 25℃
Parameter
Symbol
VRWM
Min.
-
Typ.
-
Max.
24
Unit
Reverse Stand-Off Voltage
V
V
Reverse Breakdown Voltage
at IR = 1 mA
V(BR)R
26.5
-
-
-
33
Reverse Current
at VRWM = 24 V
IR
100
nA
V
Clamping Voltage
at IPP = 1 A, tp = 8/20 µs
at IPP = 2 A, tp = 8/20 µs
VC
-
-
-
-
45
50
ESD Clamping Voltage
at ITLP = 4 A, tp = 0.2/100 ns
at ITLP =16 A, tp = 0.2/100 ns
VCL
-
-
35.8
39.7
-
-
V
Junction Capacitance
at VR = 0 V, f = 1 MHz
Dynamic Resistance 1)
Cj
-
-
-
20
-
pF
Rdyn
0.33
Ω
1) Dynamic Resistance calculated from ITLP = 4A to ITLP = 16 A .
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®
Dated: 16/08/2023 Rev : 02