E24MUWB1C
ESD Protection Diode
PINNING
Features
• Low clamping voltage
• Low leakage current
DESCRIPTION
Cathode
PIN
1
Anode
2
2
1
Applications
• Cell Phone Handsets and Accessories
• Microprocessor based equipment
• Notebooks, Desktops, and Servers
• Personal Digital Assistants (PDA's)
• Portable Instrumentation
Top View
Simplified outline SOD-323 (Bend Lead) and symbol
Absolute Maximum Ratings (at Ta = 25℃)
Parameter
Symbol
Value
336
8
Unit
Peak Pulse Power (tp = 8/20 µs)
Peak Pulse Current (tp = 8/20 µs)
PPK
IPP
W
A
Air
Contact
± 30
± 30
IEC61000-4-2 (ESD)
VESD
KV
Operating Junction Temperature
Storage Temperature Range
Tj
125
℃
℃
Tstg
- 55 to + 150
Characteristics at Ta = 25℃ unless otherwise specified
Parameter
Symbol
VRWM
Min.
-
Typ.
-
Max.
24
Unit
V
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
at IR = 1 mA
V(BR)R
26.5
-
-
-
28.8
100
42
V
nA
V
Reverse Current
at VRWM = 24 V
IR
-
-
Clamping Voltage
at IPP = 8 A , tp = 8/20 µs
VC
ESD Clamping Voltage
at ITLP = 4 A , tp = 0.2/100 ns
at ITLP = 16 A , tp = 0.2/100 ns
VCL
-
-
27.1
28.8
-
-
V
Junction Capacitance
at VR = 0 V, f = 1 MHz
Dynamic Resistance 1)
Cj
-
-
-
80
-
pF
RDYN
0.14
Ω
1) Dynamic Resistance calculated from ITLP = 4A to ITLP = 16 A .
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Dated: 20/09/2022 Rev: 03