Datasheet > E24MUPM1C

E24MUPM1C

更新时间： 2023-12-06 20:01:38

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	189K
描述
静电保护二极管

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中文翻译

获取价格

数据手册

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E24MUPM1C 数据手册

E24MUPM1C

ESD Protection Diode

PINNING

Features

• Low clamping voltage

• High peak pulse current capability

DESCRIPTION

Cathode

Anode

Transparent top view

Simplified outline DFN1610-2H and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

1500

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

I_PP

Air

Contact

± 30

ESD (IEC61000-4-2)

V_ESD

Operation Junction Temperature

Storage Temperature Range

T_j

125

℃

T_stg

- 55 to + 150

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

Reverse Current

at V_R= 24 V

I_R

0.5

1.2

µA

Forward Voltage

at I_F= 10 mA

V_F

Clamping Voltage

at I_PP= 10 A, tp = 8/20 µs

at I_PP= 30 A, tp = 8/20 µs

V_C

ESD Clamping Voltage

at I_TLP= 4 A, tp = 0.2/100 ns

at I_TLP=16 A, tp = 0.2/100 ns

V_CL

32.8

Junction Capacitance

at V_R= 0 V, f = 1 MHz

Dynamic Resistance ¹⁾

C_j

220

R_dyn

0.15

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16 A .

1 / 3

Dated: 03/07/2023 Rev : 01

12 3

中文翻译

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