Datasheet > E24MUPC1C

E24MUPC1C

更新时间： 2023-12-06 20:11:28

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	202K
描述
静电保护二极管

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中文翻译

获取价格

数据手册

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E24MUPC1C 数据手册

E24MUPC1C

ESD Protection Diode

PINNING

DESCRIPTION

Cathode

Features

• Ultra-low leakage current

• Low clamping voltage

• Solid-state silicon technology

Anode

Transparent top view

Simplified outline DFN1006-2H and symbol

Applications

• Computers and peripherals

• Cellular handsets

• Portable electronics

• Notebooks

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

360

Unit

Peak Power Dissipation (tp = 8/20 μs)

Peak Pulse Current (tp = 8/20 μs)

I_PP

Air

Contact

± 30

IEC61000-4-2 (ESD)

V_ESD

Junction Temperature

T_j

125

℃

Storage Temperature Range

T_stg

- 55 to + 150

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_T= 1 mA

V_(BR)R

26.5

Reverse Current

at V_R= 24 V

I_R

µA

Clamping Voltage

at I_PP= 1 A, tp = 8/20 µs

at I_PP= 8 A, tp = 8/20 µs

V_C

ESD Clamping Voltage

at I_TLP= 4 A, tp = 0.2/100 ns

at I_TLP=16 A, tp = 0.2/100 ns

V_CL

27.1

28.8

Junction Capacitance

at V_R= 24 V, f = 1 MHz

Dynamic Resistance ¹⁾

C_j

R_dyn

0.14

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16A .

1 / 3

Dated: 23/09/2021 Rev : 01

12 3

中文翻译

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