Datasheet > E24MUD5B

E24MUD5B

更新时间： 2023-12-06 20:10:41

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	200K
描述
静电保护二极管

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中文翻译

获取价格

数据手册

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E24MUD5B 数据手册

E24MUD5B

ESD Protection Diode

Features

• Low clamping voltage

• Low leakage current

1. I/O1 2. GND 3. I/O2

4. I/O3 5. I/O4 6. I/O5

SOT-26 Plastic Package

Applications

• Portable electronics

• Audio and video equipment

• Computers and peripherals

• Communication systems

• Cellular handsets and accessories

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

200

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

I_PP

Air

Contact

± 15

± 8

ESD per IEC 61000-4-2

V_ESD

Operation Junction Temperature

Storage Temperature Range

T_j

125

℃

T_stg

- 55 to + 150

Characteristics at T_a= 25℃

Parameter

Symbol

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

at Any Pin to GND

V_RWM

V_(BR)R

I_R

Reverse Breakdown Voltage

at I_R= 1 mA, Any Pin to GND

25.5

Reverse Current

100

at V_RWM= 24 V, Any Pin to GND

Clamping Voltage

at I_PP= 1 A, tp = 8/20 µs, Any I/O to GND

at I_PP= 4 A, tp = 8/20 µs, Any I/O to GND

V_C

ESD Clamping Voltage

at I_TLP= 4 A, tp = 0.2/100 ns, Any I/O to GND

at I_TLP=16 A, tp = 0.2/100 ns, Any I/O to GND

V_CL

27.1

28.8

Junction Capacitance

at V_R= 0 V, f = 1 MHz

Dynamic Resistance ¹⁾

C_j

R_dyn

0.14

Ω

Dynamic Resistance calculated from I_TLP= 4 A to I_TLP= 16 A.

1 / 3

Dated: 11/05/2023 Rev: 01

12 3

中文翻译

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