Datasheet > E18MUWS1C

E18MUWS1C

更新时间： 2023-12-06 20:07:42

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	330K
描述
静电保护二极管

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E18MUWS1C 数据手册

E18MUWS1C

ESD Protection Diode

PINNING

DESCRIPTION

Cathode

Features

• Low clamping voltage

• Low leakage current

Anode

Applications

Top View

Marking Code : 8L

• Single line TVS diode

Simplified outline SOD-323 and symbol

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

Symbol

P_PK

Value

1600

Unit

I_PP

Air

Contact

± 30

IEC61000-4-2 (ESD)

V_ESD

Operating Temperature

T_j

125

℃

Storage Temperature Range

T_stg

- 55 to + 150

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

Reverse Current

at V_RWM= 18 V

I_R

µA

Clamping Voltage

V_C

at I_PP= 1 A , tp = 8/20 µs

at I_PP= 40 A , tp = 8/20 µs

ESD Clamping Voltage

at I_TLP= 4 A, tp = 0.2/100 ns

at I_TLP=16 A, tp = 0.2/100 ns

V_CL

21.5

22.5

Junction Capacitance

at V_R= 0 V, f = 1 MHz

Dynamic Resistance ¹⁾

C_j

400

R_dyn

0.08

Ω

Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16 A .

1 / 3

Dated : 14/10/2021 Rev: 01

12 3

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