Datasheet > E12MUWA1C

E12MUWA1C

更新时间： 2023-12-06 20:06:24

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	209K
描述
静电保护二极管

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E12MUWA1C 数据手册

E12MUWA1C

ESD Protection Diode

PINNING

DESCRIPTION

Cathode

Features

• High capacitance

• Low clamping voltage

Anode

Top View

Simplified outline SOD-123 and symbol

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

Symbol

P_PK

Value

500

Unit

I_PP

Air

Contact

± 30

IEC61000-4-2 (ESD)

V_ESD

Operating Junction Temperature Range

Storage Temperature Range

T_j

- 55 to +125

- 55 to + 150

℃

T_stg

Characteristics at T_a= 25℃ unless otherwise specified

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

13.3

Reverse Current

at V_RWM= 12 V

I_R

0.5

0.9

µA

Forward Voltage

at I_F= 10 mA

V_F

Clamping Voltage

at I_PP= 1 A , tp = 8/20 µs

at I_PP= 20 A , tp = 8/20 µs

V_C

ESD Clamping Voltage

at I_TLP= 4 A, tp = 0.2/100 ns

at I_TLP=16 A, tp = 0.2/100 ns

V_CL

13.5

13.3

Junction Capacitance

at V_R= 0 V, f = 1 MHz

Dynamic Resistance ¹⁾

C_j

200

R_dyn

-0.02

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4A to I_TLP= 16 A .

1 / 3

Dated : 17/02/2023 Rev : 02

12 3

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