DTU2N60
www.din-tek.jp
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
600
Definition
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFRC20, SiHFRC20)
• Straight Lead (IRFUC20, SiHFUC20)
• Available in Tape and Reel
• Fast Switching
R
DS(on) (Ω)
VGS = 10 V
4.4
Qg (Max.) (nC)
Qgs (nC)
18
3.0
Q
gd (nC)
8.9
Configuration
Single
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
D
DPAK
(TO-252)
IPAK
(TO-251)
D
D
G
S
G
S
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
600
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
V
20
T
C = 25 °C
2.0
Continuous Drain Current
VGS at 10 V
ID
TC = 100 °C
1.3
A
Pulsed Drain Currenta
IDM
8.0
Linear Derating Factor
0.33
0.020
74
W/°C
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
EAS
IAR
mJ
A
2.0
Repetitive Avalanche Energya
EAR
4.2
mJ
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
T
C = 25 °C
42
PD
W
V/ns
°C
TA = 25 °C
2.5
dV/dt
3.0
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
- 55 to + 150
260d
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 37 mH, Rg = 25 Ω, IAS = 2.0 A (see fig. 12).
c. ISD ≤ 2.0 A, dI/dt ≤ 40 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
1