DTU15P03
www.din-tek.jp
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
•
Halogen-free
I
D (A)d
TrenchFET® Power MOSFET
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
100 % Rg Tested
0 .043 at VGS = - 10 V
0.070 at VGS = - 4.5 V
- 14.9
- 11.6
RoHS
- 30
29.5 nC
COMPLIANT
100 % UIS Tested
APPLICATIONS
•
Load Switch
•
Notebook Adaptor Switch
S
TO-252
G
G
D
S
D
Top View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
VDS
Limit
- 30
Unit
Drain-Source Voltage
Gate-Source Voltage
V
VGS
25
T
C = 25 °C
- 14.9
- 11.9
- 10.9a, b
- 8.6a, b
- 60
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
A
IDM
IS
Pulsed Drain Current
- 4.1
- 2.2a, b
TC = 25 °C
TA = 25 °C
Continuous Source-Drain Diode Current
IAS
Avalanche Current
- 20
L = 0.1 mH
EAS
Single-Pulse Avalanche Energy
20
mJ
W
T
C = 25 °C
5.0
TC = 70 °C
TA = 25 °C
TA = 70 °C
3.2
PD
Maximum Power Dissipation
2.7a, b
1.7a, b
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJF
Typical
38
Maximum
Unit
°C/W
Maximum Junction-to-Ambienta, c
t ≤ 10 s
Steady State
46
25
Maximum Junction-to-Foot
20
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 85 °C/W.
d. Based on TC = 25 °C.
1