DTS7001
www.din-tek.jp
P-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) ()
V
GS(th) (V)
ID (mA)
Definition
•
•
•
•
•
•
•
•
TrenchFET® Power MOSFET
High-Side Switching
Low On-Resistance: 5
Low Threshold: - 2 V (typ.)
Fast Swtiching Speed: 20 ns (typ.)
Low Input Capacitance: 20 pF (typ.)
1200 V ESD Protection
- 60
5 at VGS = - 10 V
- 1 to - 3
- 130
TO-236
(SOT-23)
S
Compliant to RoHS Directive 2002/95/EC
G
S
1
2
APPLICATIONS
G
3
D
•
Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
•
•
•
Battery Operated Systems
Power Supply Converter Circuits
Solid-State Relays
Top View
D
P-Channel MOSFET
DTS6401
BENEFITS
•
•
•
•
•
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Easily Driven without Buffer
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
- 60
Unit
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
V
20
TA = 25 °C
- 130
- 105
- 800
350
Continuous Drain Currenta
Pulsed Drain Currentb
ID
TA = 100 °C
mA
IDM
PD
TA = 25 °C
Power Dissipationa
mW
TA = 100 °C
140
Maximum Junction-to-Ambienta
350
°C/W
RthJA
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
1