Datasheet > DTS6401

DTS6401

更新时间： 2022-08-08 13:08:32

品牌	Logo	应用领域
鼎日 - DINTEK		/
页数	文件大小	规格书
10页	3556K
描述
Power MOSFET Sink to Lead Creepage Distance = 4.8 mm

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DTS6401 数据手册

DTS6401

www.din-tek.jp

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Isolated Package

- 60

Available

• High Voltage Isolation = 2.5 kV_RMS(t = 60 s;

f = 60 Hz)

R_DS(on)(Ω)

V_GS= - 10 V

0.40

RoHS*

COMPLIANT

• Sink to Lead Creepage Distance = 4.8 mm

• P-Channel

• 175 °C Operating Temperature

• Dynamic dV/dt Rating

Q_g(Max.) (nC)

3.8

_gs(nC)

_gd(nC)

5.1

Configuration

Single

• Low Thermal Resistance

• Lead (Pb)-free Available

TO-236

(SOT-23)

P-Channel MOSFET

Top View

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

- 60

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

- 5.2

- 3.8

- 21

Continuous Drain Current

V_GSat - 10 V

I_D

T_C=100°C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.18

120

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

- 5.2

2.7

E_AR

Maximum Power Dissipation

T_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

- 4.5

- 55 to + 175

300^d

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= - 25 V, starting T_J= 25 °C, L = 5.0 mH, R_G= 25 Ω, I_AS= - 5.3 A (see fig. 12).

c. I_SD≤ - 6.7 A, dI/dt ≤ 90 A/µs, V_DD≤ V_DS, T_J≤ 175 °C.

d. 1.6 mm from case.

12 3 4 5 6 7...10

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