Datasheet > DTS4501_13

DTS4501_13

更新时间： 2022-06-07 04:31:30

品牌	Logo	应用领域
鼎日 - DINTEK		/
页数	文件大小	规格书
9页	2048K
描述
P-Channel 40 V (D-S) 175 C MOSFET Halogen-free

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DTS4501_13 数据手册

DTS4501

www.din-tek.jp

P-Channel 40 V (D-S) 175 °C MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET^®Power MOSFET

• AEC-Q101 Qualified^c

• 100 % R_gand UIS Tested

PRODUCT SUMMARY

V_DS(V)

- 40

0.083

0.110

- 3.6

R_DS(on)() at V_GS= - 10 V

R_DS(on)() at V_GS= - 4.5 V

I_D(A)

Configuration

Single

• Compliant to RoHS Directive 2002/95/EC

TO-236

(SOT-23)

Top View

DTS4501

P-Channel MOSFET

ORDERING INFORMATION

Package

SOT-23

Lead (Pb)-free and Halogen-free

DTS4501

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

- 40

V_GS

_C= 25 °C

- 3.6

Continuous Drain Current

I_D

T_C= 125 °C

- 2.6

Continuous Source Current (Diode Conduction)

Pulsed Drain Current^a

I_S

- 3.6

I_DM

I_AS

- 18

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

- 12

L = 0.1 mH

E_AS

7.2

T_C= 25 °C

Maximum Power Dissipation^a

P_D

T_C= 125 °C

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

166

UNIT

Junction-to-Ambient

PCB Mount^b

°C/W

Junction-to-Foot (Drain)

R_thJF

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. When mounted on 1" square PCB (FR-4 material).

c. Parametric verification ongoing.

12 3 4 5 6 7...9

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