Datasheet > DTS2012

DTS2012

更新时间： 2022-04-21 08:47:29

品牌	Logo	应用领域
鼎日 - DINTEK		/
页数	文件大小	规格书
9页	1870K
描述
N-Channel 30 V (D-S) MOSFET Halogen-free

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DTS2012 数据手册

DTS2012

www.din-tek.jp

N-Channel 30 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)()

I_D(A)^a

Q_g(Typ.)

Definition

0.045 at V_GS= 10 V

0.049 at V_GS= 4.5 V

0.060 at V_GS= 2.5 V

•

TrenchFET^®Power MOSFET

Typical ESD Protection 2000 V HBM

100 % R_gTested

4 nC

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

SOT-323

SC-70 (3-LEADS)

•

Portable Devices

- Load Switch

- Battery Switch

Load Switch for Motors, Relays and Solenoids

•

Top View

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

_C= 70 °C

4^a

4^{a, b, c}

3.7^{b, c}

2.3^a

1.3^{b, c}

2.8

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current (t = 300 µs)

T_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

T_C= 25 °C

_C= 70 °C

1.8

Maximum Power Dissipation

P_D

1.56^{b, c}

1.0^{b, c}

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

Typical

Maximum

Unit

R_thJA

t  5 s

°C/W

R_thJF

Steady State

Maximum Junction-to-Foot (Drain)

Notes:

a. Package limited, T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 125 °C/W.

12 3 4 5 6 7...9

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