DTS03K16
www.din-tek.jp
N-Channel 16V (D−S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
APPLICATIONS
ID (A)
V(BR)DSS
Min (V)
rDS(on)
DTS03K16 DTS03K16A
Max (W)
V
GS(th) (V)
D Direct Logic-Level Interface: TTL/CMOS
1.0 @ V = 10 V
GS
0.42
0.35
0.64
0.53
D Drivers: Relays, Solenoids, Lamps, Hammers,
16
1.0 to 3.0
Displays, Memories, Transistors, etc.
1.4 @ V = 4.5 V
GS
D Battery Operated Systems
D Solid-State Relays
TO-236
(SOT-23)
D
G
S
1
2
3
D
G
S
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limit
DTS03K16
DTS03K16A
Parameter
Symbol
Unit
Drain-Source Voltage
Gate-Source Voltage
V
16
DS
GS
V
V
"8
T = 25_C
A
0.42
0.33
0.8
0.64
0.51
1.5
A
Continuous Drain Current (T = 150_C)
I
J
D
T = 70_C
A
a
Pulsed Drain Current
I
DM
T = 25_C
A
0.35
0.22
357
0.8
A
Power Dissipation
P
W
D
T = 70_C
0.51
156
Thermal Resistance, Junction-to-Ambient
R
thJA
_C/W
_C
Operating Junction and Storage Temperature Range
T , T
J
−55 to 150
stg
Notes
a. Pulse width limited by maximum junction temperature.
1