Datasheet > DTP0403_13

DTP0403_13

更新时间： 2024-09-16 12:52:03

品牌	Logo	应用领域
鼎日 - DINTEK		/
页数	文件大小	规格书
7页	1300K
描述
N-Channel 30-V (D-S) MOSFET TrenchFET Power MOSFET

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DTP0403_13 数据手册

DTP0403

www.din-tek.jp

N-Channel 30-V (D-S) MOSFET

FEATURES

TrenchFET^®Power MOSFET

PRODUCT SUMMARY

•

V_DS(V)

R_DS(on)()

Q_g(Typ)

_D(A)^{a, e}

100 % R_gand UIS Tested

Compliant to RoHS Directive 2011/65/EU

0.0038 at V_GS= 10 V

0.0044 at V_GS= 4.5 V

82 nC

APPLICATIONS

•

OR-ing

Server

DC/DC

TO-220AB

N-Channel MOSFET

G D S

Top View

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

98^{a, e}

98^e

28.8^{b, c}

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 175 °C)

I_D

27^{b, c}

I_DM

I_AS

Pulsed Drain Current

Avalanche Current Pulse

Single Pulse Avalanche Energy

L = 0.1 mH

E_AS

64.8

90^{a, e}

3.13^{b, c}

250^a

T_C= 25 °C

T_A= 25 °C

T_C= 25 °C

I_S

Continuous Source-Drain Diode Current

T_C= 70 °C

_A= 25 °C

175

P_D

Maximum Power Dissipation

3.75^{b, c}

2.63^{b, c}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

Typ.

Max.

Unit

R_thJA

t  10 sec

°C/W

R_thJC

Maximum Junction-to-Case

Steady State

0.5

0.6

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 sec.

d. Maximum under steady state conditions is 90 °C/W.

e. Calculated based on maximum junction temperature. Package limitation current is 90 A.

12 3 4 5 6 7

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