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DTM9936 PDF预览

DTM9936

更新时间: 2024-11-30 12:24:27
品牌 Logo 应用领域
鼎日 - DINTEK /
页数 文件大小 规格书
9页 307K
描述
Dual N-Channel 20-V (D-S) MOSFET

DTM9936 数据手册

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DT.  
www.daysemi.jp  
Dual N-Channel 20-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
ID (A)a  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
Definition  
TrenchFET® Power MOSFET  
100 % UIS Tested  
Compliant to RoHS Directive 2002/95/EC  
0.018 at VGS = 4.5 V  
0.022 at VGS = 2.5 V  
8
8
20  
10 nC  
APPLICATIONS  
DC/DC Converter  
- Game Machine  
- PC  
SO-8  
D
S
1
2
3
4
8
7
6
5
D1  
D2  
1
1
2
2
1
D
D
D
G
S
1
2
G
2
G1  
G2  
Top View  
S2  
S1  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
20  
12  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
V
8a  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
8a  
Continuous Drain Current (TJ = 150 °C)  
ID  
8a, b, c  
6.7b, c  
30  
2.6  
1.7b, c  
5
A
Pulsed Drain Current  
IDM  
IS  
TC = 25 °C  
Continuous Source-Drain Diode Current  
TA = 25 °C  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
IAS  
EAS  
L = 0.1 mH  
mJ  
W
1.25  
3.1  
2
2b, c  
1.3b, c  
T
C = 25 °C  
TC = 70 °C  
A = 25 °C  
TA = 70 °C  
PD  
Maximum Power Dissipation  
T
TJ, Tstg  
°C  
Operating Junction and Storage Temperature Range  
- 55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
RthJF  
Typical  
50  
Maximum  
Unit  
Maximum Junction-to-Ambienta, c, d  
t 10 s  
Steady State  
62.5  
°C/W  
Maximum Junction-to-Foot (Drain)  
32  
40  
Notes:  
a. Package limited, TC = 25 °C.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. Maximum under Steady State conditions is 110 °C/W.  
1

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