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DTM4953_13

更新时间: 2024-11-29 12:52:03
品牌 Logo 应用领域
鼎日 - DINTEK /
页数 文件大小 规格书
9页 1695K
描述
Dual P-Channel 30 V (D-S) MOSFET TrenchFET Power MOSFET

DTM4953_13 数据手册

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DTM4953  
www.din-tek.jp  
Dual P-Channel 30 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• TrenchFET® Power MOSFET  
- 30  
• AEC-Q101 Qualifiedc  
RDS(on) () at VGS = - 10 V  
RDS(on) () at VGS = - 4.5 V  
0.046  
• 100 % Rg and UIS Tested  
0.078  
ID (A) per leg  
-5.4  
Configuration  
Dual  
S
1
S
2
SO-8  
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
1
G
2
G
Top View  
D
1
D
2
P-Channel MOSFET P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
- 30  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
20  
T
C = 25 °C  
- 5.4  
- 3.8  
- 3  
Continuous Drain Current  
ID  
TC = 125 °C  
Continuous Source Current (Diode Conduction)  
Pulsed Drain Currenta  
IS  
A
IDM  
IAS  
- 26  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
- 17  
L = 0.1 mH  
EAS  
14  
mJ  
W
TC = 25 °C  
3.3  
Maximum Power Dissipationa  
PD  
TC = 125 °C  
1.1  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
- 55 to + 175  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
110  
45  
UNIT  
Junction-to-Ambient  
PCB Mountb  
°C/W  
Junction-to-Foot (Drain)  
RthJF  
Notes  
a. Pulse test; pulse width 300 μs, duty cycle 2 %.  
b. When mounted on 1" square PCB (FR-4 material).  
c. Parametric verification ongoing.  
1

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