Datasheet > DTM4936_13

DTM4936_13

更新时间： 2024-11-29 12:52:03

品牌	Logo	应用领域
鼎日 - DINTEK		/
页数	文件大小	规格书
9页	1697K
描述
Dual N-Channel 30-V (D-S) MOSFET Halogen-free

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中文翻译

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数据手册

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DTM4936_13 数据手册

DTM4936

www.din-tek.jp

Dual N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

6.8

Q_g(Typ.)

Definition

TrenchFET^®Power MOSFET

100 % UIS Tested

0.026 at V_GS= 10 V

0.033 at V_GS= 4.5 V

•

3.7 nC

5.8

100 % R Tested

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Set Top Box

Low Current DC/DC

SO-8

Top View

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

V_GS

Limit

6.8^a

5.2

5.2^{b, c}

4.2^{b, c}

2.25

1.48^{b, c}

Unit

T_C= 25 °C

T_C= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

I_AS

E_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

1.25

2.7

1.77

1.78^{b, c}

1.14^{b, c}

_C= 25 °C

T_C= 70 °C

_A= 25 °C

T_A= 70 °C

P_D

Maximum Power Dissipation

T_J, T_stg

°C

Operating Junction and Storage Temperature Range

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJF

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{a, c, d}

t ≤ 10 s

Steady State

°C/W

Maximum Junction-to-Foot (Drain)

Notes:

a. Package limited, T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 110 °C/W.

12 3 4 5 6 7...9

中文翻译

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