Datasheet > DTM4909

DTM4909

更新时间： 2024-11-29 12:52:03

品牌	Logo	应用领域
鼎日 - DINTEK		/
页数	文件大小	规格书
9页	1567K
描述
Dual P-Channel 40 V (D-S) MOSFET Halogen-free

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DTM4909 数据手册

DTM4909

www.din-tek.jp

Dual P-Channel 40 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)()

Q_g(Typ.)

_D(A)^d

- 8

Definition

TrenchFET^®Power MOSFET

100 % R_gTested

0.027 at V_GS= - 10 V

0.034 at V_GS= - 4.5 V

•

- 40

21.7 nC

- 7.2

100 % UIS Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

SO-8

•

Load Switches

- Notebook PCs

- Desktop PCs

Top View

P-Channel MOSFET P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

- 40

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

T_C= 70 °C

_A= 25 °C

- 8.0

- 6.5

Continuous Drain Current (T_J= 150 °C)

I_D

- 6.4^{a, b}

- 5.1^{a, b}

T_A= 70 °C

- 30^e

I_DM

I_S

Pulsed Drain Current

- 2.6

T_C= 25 °C

Continuous Source-Drain Diode Current

- 1.6^{a, b}

- 20

T_A= 25 °C

I_AS

Avalanche Current

L = 0.1 mH

E_AS

Single-Pulse Avalanche Energy

T_C= 25 °C

T_C= 70 °C

3.2

2.1

P_D

Maximum Power Dissipation

2.0^{a, b}

1.28^{a, b}

- 55 to 150

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{a, c}

Symbol

Typical

Maximum

Unit

°C/W

R_thJA

R_thJF

t 10 s

Steady State

62.5

Maximum Junction-to-Foot

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under steady state conditions is 110 °C/W.

d. Based on T_C= 25 °C.

e. Limited by package.

12 3 4 5 6 7...9

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