Datasheet > DTM4830

DTM4830

更新时间： 2024-11-29 12:51:27

品牌	Logo	应用领域
鼎日 - DINTEK		/
页数	文件大小	规格书
8页	311K
描述
N-Channel 80 V (D-S) MOSFET

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中文翻译

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数据手册

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DTM4830 数据手册

DT.

www.daysemi.jp

N-Channel 80 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)()

I_D(A)^a

Q_g(Typ.)

Definition

0.075 at V_GS= 10 V

3.5

•

TrenchFET^®Power MOSFET

100 % R_gand UIS Tested

Compliant to RoHS Directive 2002/95/EC

7.3 nC

APPLICATIONS

•

DC/DC Conversion

- Notebook System Power

SO-8

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±30

3.5

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

2.9

Pulsed Drain Current ^C

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_DM

I_AR

E_AR

12.8

T_A=25°C

Power Dissipation ^B

T_A=70°C

P_D

°C

1.3

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

Steady-State

R_θJL

12 3 4 5 6 7 8

中文翻译

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