Datasheet > DTM4485

DTM4485

更新时间： 2024-11-29 12:52:03

品牌	Logo	应用领域
鼎日 - DINTEK		/
页数	文件大小	规格书
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描述
P-Channel 30-V (D-S) MOSFET TrenchFET Power MOSFET

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DTM4485 数据手册

DTM4485

www.din-tek.jp

P-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^{a, e}

- 6

Definition

TrenchFET^®Power MOSFET

100 % R_gTested

0.042 at V_GS= - 10 V

0.072 at V_GS= - 4.5 V

•

- 30

7 nC

- 6

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Load Switch

Notebook Adaptor Switch

SO-8

Top View

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

- 30

V_GS

- 6^e

- 5.9^{b, c}

- 4.7^{b, c}

- 25

_C= 25 °C

_C= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

Pulsed Drain Current

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

- 4.2

- 2^{b, c}

Continous Source-Drain Diode Current

3.2

Maximum Power Dissipation

P_D

2.4^{b, c}

1.5^{b, c}

- 55 to 150

T_J, T_stg

°C

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

Typical

Maximum

Unit

R_thJA

R_thJF

t ≤ 10 s

Steady State

°C/W

Maximum Junction-to-Foot (Drain)

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 85 °C/W.

e. Package Limited.

12 3 4 5 6 7...9

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